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Gate-Emitter Leakage Current : 200 nA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Pd - Power Dissipation : 1150 W
Collector- Emitter Voltage VCEO Max : 650 V
Package / Case : PLUS247-3
Maximum Operating Temperature : + 175 C
Maximum Gate Emitter Voltage : 20 V
Packaging : Tube
Configuration : Single
Continuous Collector Current at 25 C : 370 A
Manufacturer : IXYS
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