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Product Category : MOSFET
Vgs (Max) : ±30V
Current - Continuous Drain (Id) @ 25°C : 10A (Tc)
FET Type : N-Channel
Mounting Type : Through Hole
Gate Charge (Qg) (Max) @ Vgs : 42nC @ 10V
Manufacturer : STMicroelectronics
Minimum Quantity : 1
Drive Voltage (Max Rds On, Min Rds On) : 10V
Operating Temperature : -55°C ~ 150°C (TJ)
FET Feature : -
Series : SuperMESH3™
Input Capacitance (Ciss) (Max) @ Vds : 1180pF @ 25V
Supplier Device Package : I2PAKFP (TO-281)
Part Status : Obsolete
Packaging : Tube
Rds On (Max) @ Id, Vgs : 1 Ohm @ 3.6A, 10V
Power Dissipation (Max) : 35W (Tc)
Package / Case : TO-262-3 Full Pack, I²Pak
Technology : MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id : 4.5V @ 100µA
Drain to Source Voltage (Vdss) : 650V
Description : MOSFET N-CH 650V 10A I2PAKFP
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