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IPP052N06L3GXKSA1

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IPP052N06L3GXKSA1

Product Category : MOSFET

Vgs (Max) : ±20V

Current - Continuous Drain (Id) @ 25°C : 80A (Tc)

FET Type : N-Channel

Mounting Type : Through Hole

Gate Charge (Qg) (Max) @ Vgs : 50nC @ 4.5V

Manufacturer : Infineon Technologies

Minimum Quantity : 1

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Operating Temperature : -55°C ~ 175°C (TJ)

FET Feature : -

Series : OptiMOS™

Input Capacitance (Ciss) (Max) @ Vds : 8400pF @ 30V

Supplier Device Package : PG-TO-220-3

Part Status : Active

Packaging : Tube

Rds On (Max) @ Id, Vgs : 5 mOhm @ 80A, 10V

Power Dissipation (Max) : 115W (Tc)

Package / Case : TO-220-3

Technology : MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id : 2.2V @ 58µA

Drain to Source Voltage (Vdss) : 60V

Description : MOSFET N-CH 60V 80A TO220-3

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The IPP052N06L3GXKSA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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