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IPP65R041CFD7XKSA1

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IPP65R041CFD7XKSA1

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4.5V @ 1.24mA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : TO-220-3

Gate Charge (Qg) (Max) @ Vgs : 102 nC @ 10 V

Rds On (Max) @ Id, Vgs : 41mOhm @ 24.8A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tube

Drain to Source Voltage (Vdss) : 650 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 4975 pF @ 400 V

Mounting Type : Through Hole

Series : CoolMOS™ CFD7

Supplier Device Package : PG-TO220-3-1

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 50A (Tc)

Power Dissipation (Max) : 227W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IPP65R041

Description : 650V FET COOLMOS TO247

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N-Channel 650 V 50A (Tc) 227W (Tc) Through Hole PG-TO220-3-1

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